Vertical tunneling finfet

ABSTRACT

A tunneling transistor is implemented in silicon, using a FinFET device architecture. The tunneling FinFET has a non-planar, vertical, structure that extends out from the surface of a doped drain formed in a silicon substrate. The vertical structure includes a lightly doped fin defined by a subtractive etch process, and a heavily-doped source formed on top of the fin by epitaxial growth. The drain and channel have similar polarity, which is opposite that of the source. A gate abuts the channel region, capacitively controlling current flow through the channel from opposite sides. Source, drain, and gate terminals are all electrically accessible via front side contacts formed after completion of the device. Fabrication of the tunneling FinFET is compatible with conventional CMOS manufacturing processes, including replacement metal gate and self-aligned contact processes. Low-power operation allows the tunneling FinFET to provide a high current density compared with conventional planar devices.

BACKGROUND Technical Field

The present disclosure generally relates to various geometries forFinFET devices built on a silicon substrate and, in particular, toFinFETs suitable for low-power applications.

Description of the Related Art

Conventional integrated circuits incorporate planar field effecttransistors (FETs) in which current flows through a semiconductingchannel between a source and a drain, in response to a voltage appliedto a control gate. The semiconductor industry strives to obey Moore'slaw, which holds that each successive generation of integrated circuitdevices shrinks to half its size and operates twice as fast. As devicedimensions have shrunk below 100 nm, however, conventional silicondevice geometries and materials have experienced difficulty maintainingswitching speeds without incurring failures such as, for example,leaking current from the device into the semiconductor substrate.Several new technologies have emerged that allowed chip designers tocontinue shrinking gate lengths to 45 nm, 22 nm, and then as low as 14nm.

One particularly radical technology change entailed re-designing thestructure of the FET from a planar device to a three-dimensional devicein which the semiconducting channel was replaced by a fin that extendsout from the plane of the substrate. In such a device, commonly referredto as a FinFET, the control gate wraps around three sides of the fin soas to influence current flow from three surfaces instead of one. Theimproved control achieved with a 3-D design results in faster switchingperformance and reduced current leakage. Building taller devices hasalso permitted increasing the device density within the same footprintthat had previously been occupied by a planar FET. Examples of FinFETdevices are described in further detail in U.S. Pat. No. 8,759,874 andU.S. Patent Application Publication No. US2014/0175554, assigned to thesame assignee as the present patent application.

As integrated circuits shrink with each technology generation, morepower is needed to drive a larger number of transistors housed in asmaller volume. To prevent chips from overheating, and to conservebattery power, each generation of transistors is designed to operate ata lower voltage and to dissipate less power. Currently, state-of-the-arttransistor operating voltages are in the range of about 0-0.5 V. In aconventional complementary metal-oxide-semiconductor (CMOS) field effecttransistor, the source and drain are doped to have a same polarity,e.g., both positive, in a PFET, or both negative in an NFET. When thegate voltage applied to the transistor, VG, exceeds a threshold voltage,VT, the device turns on and current flows through the channel. When thegate voltage applied to the transistor is below the threshold voltage,the drain current, ID, ideally is zero and the device is off. However,in reality, in the sub-threshold regime, there exists a small leakagecurrent that is highly sensitive to the applied voltage. Over time, theleakage current drains charge from the power supply, e.g., a mobilephone battery or a computer battery, thus necessitating more frequentrecharging. A change in gate voltage that is needed to reduce thesub-threshold leakage current by a factor of 10 is called thesub-threshold swing. It is desirable for the sub-threshold swing to beas small as possible. It is understood by those skilled in the art thatMOSFETs have reached their lower limit of sub-threshold swing, at 60mV/decade. Thus, a different type of device is needed to furtherdecrease the sub-threshold swing.

Tunneling field effect transistors (TFETs) are considered promisingalternatives to conventional CMOS devices for use in future integratedcircuits having low-voltage, low-power applications. Unlike a MOSFET,the source and drain of a TFET are doped to have opposite polarity.During operation of the TFET, charge carriers tunnel through a potentialbarrier rather than being energized to surmount the potential barrier,as occurs in a MOSFET. Because switching via tunneling requires lessenergy, TFETs are particularly useful in low-power applications such asmobile devices for which battery lifetime is of utmost importance.Another reason TFETs provide enhanced switching performance forlow-voltage operation is that TFETs have substantially smaller values ofsub-threshold swing than MOSFETs.

BRIEF SUMMARY

A tunneling transistor is implemented in silicon, using a FinFET devicearchitecture. The tunneling FinFET has a non-planar, vertical structurethat extends out from the surface of a doped drain region formed in thesubstrate. The vertical structure includes a lightly-doped fin overlyingthe doped drain region, and a heavily-doped source region formed on topof the fin. The doped drain region and the fin have similar polarity,while the source has opposite polarity to that of the drain and the fin.The polarities and doping concentrations of the source, drain, andchannel regions are designed to permit tunneling of charge carriersduring operation of the device. The fin is defined by a subtractiveetching process, whereas the source region is formed by epitaxial growthfrom the fin. Thus, instead of the usual FinFET architecture, in whichthe source and drain charge reservoirs are located on either end of ahorizontal fin channel, the present device has a vertical fin channelwhich is positioned on top of the drain and underneath the source. Agate abuts opposite sides of the fin, capacitively controlling currentflow through the channel, the current flow between the source and thedrain being in a transverse direction with respect to a top surface ofthe substrate. The source, drain, and gate terminals of the verticaltunneling FinFET are all electrically accessible via front side contactsmade after the transistor is formed.

Fabrication of the tunneling FinFET is compatible with conventional CMOSmanufacturing processes, including replacement metal gate (RMG) andself-aligned contact (SAC) processes. Low-power operation allows thetunneling FinFET to provide a high current density, or “current perfootprint” on a chip, compared with conventional planar devices.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

In the drawings, identical reference numbers identify similar elementsor acts. The sizes and relative positions of elements in the drawingsare not necessarily drawn to scale.

FIG. 1 is a generic circuit schematic diagram of an n-channel tunnelingFET (TFET) such as, for example, an n-type tunneling FinFET as describedherein.

FIG. 2 is a generic circuit schematic diagram of a p-channel tunnelingFET (TFET) such as, for example, a p-type tunneling FinFET as describedherein.

FIG. 3 is a flow diagram showing steps in a method of fabricating a pairof tunneling FinFETs as illustrated in FIGS. 4-15, according to oneembodiment described herein.

FIGS. 4-9 are cross-sectional views of the pair of tunneling FinFETs atsuccessive steps during fabrication using the method shown in FIG. 3.

FIG. 10 is a cross-sectional view of a completed pair of tunnelingFinFETs fabricated using the method shown in FIG. 3.

FIG. 11 is a top plan view of the completed pair of tunneling FinFETsafter circular contacts have been formed to the source, drain, and gateterminals.

FIG. 12 is a cross-sectional view of the completed pair of tunnelingFinFETs shown in FIG. 11, along a cut line through the gate contacts.

FIG. 13 is a top plan view of the completed pair of tunneling FinFETsafter square contacts have been formed to the source, drain, and gateterminals.

FIG. 14 is a cross-sectional view of the completed pair of tunnelingFinFETs shown in FIG. 13, along a cut line through the source and draincontacts.

DETAILED DESCRIPTION

In the following description, certain specific details are set forth inorder to provide a thorough understanding of various aspects of thedisclosed subject matter. However, the disclosed subject matter may bepracticed without these specific details. In some instances, well-knownstructures and methods of semiconductor processing comprisingembodiments of the subject matter disclosed herein have not beendescribed in detail to avoid obscuring the descriptions of other aspectsof the present disclosure.

Unless the context requires otherwise, throughout the specification andclaims that follow, the word “comprise” and variations thereof, such as“comprises” and “comprising” are to be construed in an open, inclusivesense, that is, as “including, but not limited to.”

Reference throughout the specification to “one embodiment” or “anembodiment” means that a particular feature, structure, orcharacteristic described in connection with the embodiment is includedin at least one embodiment. Thus, the appearance of the phrases “in oneembodiment” or “in an embodiment” in various places throughout thespecification are not necessarily all referring to the same aspect.Furthermore, the particular features, structures, or characteristics maybe combined in any suitable manner in one or more aspects of the presentdisclosure.

Reference throughout the specification to integrated circuits isgenerally intended to include integrated circuit components built onsemiconducting substrates, whether or not the components are coupledtogether into a circuit or able to be interconnected. Throughout thespecification, the term “layer” is used in its broadest sense to includea thin film, a cap, or the like, and one layer may be composed ofmultiple sub-layers.

Reference throughout the specification to conventional thin filmdeposition techniques for depositing silicon nitride, silicon dioxide,metals, or similar materials include such processes as chemical vapordeposition (CVD), low-pressure chemical vapor deposition (LPCVD), metalorganic chemical vapor deposition (MOCVD), plasma-enhanced chemicalvapor deposition (PECVD), plasma vapor deposition (PVD), atomic layerdeposition (ALD), molecular beam epitaxy (MBE), electroplating,electro-less plating, and the like. Specific embodiments are describedherein with reference to examples of such processes. However, thepresent disclosure and the reference to certain deposition techniquesshould not be limited to those described. For example, in somecircumstances, a description that references CVD may alternatively bedone using PVD, or a description that specifies electroplating mayalternatively be accomplished using electro-less plating. Furthermore,reference to conventional techniques of thin film formation may includegrowing a film in-situ. For example, in some embodiments, controlledgrowth of an oxide to a desired thickness can be achieved by exposing asilicon surface to oxygen gas or to moisture in a heated chamber.

Reference throughout the specification to conventional photolithographytechniques, known in the art of semiconductor fabrication for patterningvarious thin films, includes a spin-expose-develop process sequencetypically followed by an etch process. Alternatively or additionally,photoresist can also be used to pattern a hard mask (e.g., a siliconnitride hard mask), which, in turn, can be used to pattern an underlyingfilm.

Reference throughout the specification to conventional etchingtechniques known in the art of semiconductor fabrication for selectiveremoval of polysilicon, silicon nitride, silicon dioxide, metals,photoresist, polyimide, or similar materials includes such processes aswet chemical etching, reactive ion (plasma) etching (RIE), washing, wetcleaning, pre-cleaning, spray cleaning, chemical-mechanicalplanarization (CMP) and the like. Specific embodiments are describedherein with reference to examples of such processes. However, thepresent disclosure and the reference to certain deposition techniquesshould not be limited to those described. In some instances, two suchtechniques may be interchangeable. For example, stripping photoresistmay entail immersing a sample in a wet chemical bath or, alternatively,spraying wet chemicals directly onto the sample.

Specific embodiments are described herein with reference to verticalgate-all-around TFET devices that have been produced; however, thepresent disclosure and the reference to certain materials, dimensions,and the details and ordering of processing steps are exemplary andshould not be limited to those shown.

Turning now to the figures, FIG. 1 shows a generic n-type, or n-channel,TFET 100 exemplified by the tunneling FinFET 276 described below. Then-type TFET 100 includes a source terminal 102 that is heavily p-doped,a drain terminal 106 that is n-doped, a channel 104 that is lightlyn-doped, and a gate terminal 108. The n-type TFET operates in responseto a positive voltage applied to the gate terminal 108. Instead of beingan n-p-n transistor, the n-type TFET 100 is an N⁺⁺-P⁻-P⁺ device. Such adoping profile causes the energy bands characterizing the silicon at theP⁺⁺/N⁻ junction to be arranged so as to allow charge carriers to tunnelthrough the junction.

FIG. 2 shows a generic p-type, or p-channel, TFET 110, exemplified bythe tunneling FinFET 274 described below. The p-type TFET 110 includes asource terminal 112 that is heavily n-doped, a drain terminal 116 thatis p-doped, a channel 114 that is lightly p-doped, and a gate terminal118. The p-type TFET 110 operates in response to a negative voltageapplied to the gate terminal 118. Instead of being a p-n-p transistor,the p-type TFET 110 is an N⁺⁺-P⁻-P⁺ device. Such a doping profile altersthe energy bands characterizing the silicon at the N⁺⁺/P⁻ junction,permitting charge carriers to tunnel through the junction.

FIG. 3 shows steps in a method 200 of fabricating a pair of dualtunneling FinFETs 274, 276, according to one embodiment. The completedtunneling FinFET devices produced by the method 200 are shown in FIGS.13 and 14. Alternative embodiments of the tunneling FinFETs, formed bymodifying the method 200, are shown in FIGS. 15-17. Each tunnelingFinFET includes a doped lower drain region, a lightly-doped channelregion in the form of a fin, and an upper source region that is heavilydoped to have a polarity opposite that of the fin and the lower drainregion. The channel region extends between the source and drain regions.A gate abuts the fin from two sides so as to influence current flow inthe channel in response to an applied voltage. Steps in the method 200are further illustrated by FIGS. 4-14, and described below.

At 202, with reference to FIG. 4, a silicon substrate 220 is doped toform an n-type region 224 and a p-type region 226 that will becomechannel dopants. In one embodiment, the channel dopants are incorporatedinto the substrate by ion implantation using a hard mask 222, as is wellknown in the art. The exemplary hard mask 222 is made of silicon dioxide(SiO₂) having a thickness of about 3 nm. The hard mask 222 is grown ordeposited over the surface of the silicon substrate 220, and ispatterned with a first opening to define the n-type region 224, forexample. Negative channel dopants such as arsenic or phosphorous ionsare implanted into the silicon substrate 220 through the first openingand then annealed to drive in the channel dopants to a selected depth inthe range of about 50-60 nm. In one embodiment, the channel dopantconcentration is about 1.0 E19 cm⁻³. Then the hard mask 222 is stripped,re-formed, and patterned with a second opening for the p-type region226. Positive dopants such as boron ions are then implanted into thesilicon substrate 220 through the second opening followed by annealingto drive in the positive dopants to a similar depth and concentration asthe n-type region 224. Following implantation, the hard mask 222 isremoved. The first and second openings defining the widths of the dopedregions 224, 226 can be the same size or different sizes, in the rangeof about 80-120 nm, targeted at 100 nm, or about 2.5 times the minimumfin pitch. The doped regions 224, 226 are spaced apart by a distance ofabout 50 nm.

At 204, with reference to FIG. 5, doped fins 232, 234 are patterned,according to one embodiment, by etching the doped regions 224, 226,using a silicon nitride (SiN) fin hard mask 238. First, a pad oxide 236,about 10 nm thick, is grown on the doped silicon substrate 220, followedby deposition of the fin hard mask 238 having a thickness in the rangeof about 30-50 nm. The pad oxide 236 and the fin hard mask 238 are thenpatterned with features having a critical dimension between 6-12 nm.Once the fin hard mask 238 is patterned, n-type fins 232 and p-type fins234 are etched into the doped regions 224, 226, down to the intrinsicsubstrate 220. The doped fins 232, 234 thus formed will serve as dopedchannel regions of the tunneling FinFET devices.

Such narrow features may be directly patterned using conventionalextreme ultraviolet (EUV) lithography, or by using a self-alignedsidewall image transfer (SIT) technique. The SIT technique is also wellknown in the art and therefore is not explained herein in detail. TheSIT process is capable of defining very high aspect ratio fins 232, 234using sacrificial SiN sidewall spacers as a fin hard mask 238. Accordingto the SIT technique, a mandrel, or temporary structure, is formedfirst, on top of the doped regions 224, 226. Then a silicon nitride filmis deposited conformally over the mandrel and planarized, formingsidewall spacers on the sides of the mandrel. Then the mandrel isremoved, leaving behind a pair of narrow sidewall spacers that serve asthe fin hard mask 238. Using such a technique, very narrow mask featurescan be patterned in a self-aligned manner, without lithography.

At 206, the substrate 220 is again implanted, this time with higherconcentration dopants to form N⁺ and P⁺ doped drain regions, 230, 228,underneath the doped fins 232, 234, respectively. Thehigher-concentration dopants are implanted normal to the surface of thesubstrate 220 using a similar sequential masking process as describedabove for the n-type and p-type doped regions 224, 226. A conventionalphotoresist mask is suitable for use in step 206. Alternatively, atri-layer soft mask that includes an organic planarizing layer (OPL), asilicon anti-reflective coating (Si-ARC), and a photoresist issufficient for use in implanting the doped drain regions 230, 228. TheN⁺ and P⁺ doped drain regions 230, 228 are targeted to extend into thesilicon substrate 220 to a depth in the range of about 20-30 nm belowthe bottom of the fins 232, 234, at a concentration of about 1.0 E 20cm⁻³. The substrate can then be annealed to drive the dopants laterallyunderneath the fins 232, 234.

At 208, with reference to FIG. 6, local isolation regions 240 are formedbetween the fins, and trench isolation regions 242 are formed in thesilicon substrate 220 to separate the p-type and n-type devices.According to one embodiment, the local isolation regions are formed bycovering the fins with a thick layer of oxide. The trench isolationregion 242 is filled to a depth of 200 nm between the NFET and PFETdevices being fabricated, at the same time that the fins are coveredwith the thick oxide layer. Next, the thick oxide layer is planarizedusing a CMP process that stops on the SiN fin hard mask 238. Then thethick oxide layer is recessed to reveal the fins 232, 234, leaving anoxide thickness of 10-20 nm between the fins.

At 210, with reference to FIGS. 7-9, a multi-layer gate structure isformed by a replacement metal gate process, as is known in the art.According to one embodiment, a dummy gate 250 is formed around each pairof fins 232, 234. The dummy gate 250 can be formed by depositing apolysilicon layer to a height of about 80-90 nm above the fin hard mask238. Alternatively, the fin hard mask 238 and the pad oxide 236 can beremoved from the fins 232, 234, and the polysilicon can be depositeddirectly over the fins 232, 234. The polysilicon layer is then patternedto remove polysilicon material over the trench isolation region 242. Thepolysilicon width scales with the pitch of the fins 232, 234. Next, aSiN layer is deposited conformally over the patterned polysilicon. TheSiN layer is then patterned to remove SiN over the trench isolationregion 242. The SiN layer thus forms a gate hard mask 251 on top of thepolysilicon layer and isolation walls 252 on the sides of the dummy gate250, the isolation walls 252 having a thickness in the range of about5-10 nm. The gate hard mask 251 can be made thicker than the isolationwalls 252 by adjusting widths of the mask openings exposing the trenchisolation regions 242 when patterning the SiN layer, as shown in FIG. 7.

Next, an inter-layer dielectric (ILD) 254, e.g., SiO₂, is deposited tofill spaces between adjacent isolation walls 252. The ILD 254 is thenplanarized, stopping on the fin hard mask 238, as shown in FIG. 8.

Next, the polysilicon dummy gates 250 are removed and replaced withmetal gates. In one embodiment, the dummy gate removal step uses acombination of wet and dry etch processes. The etchant used to removethe dummy gates is selective to the SiN of the gate hard mask 251 andthe isolation walls 252, as well as the doped silicon fins 232, 234.

Finally, multi-layer replacement metal gates are formed in place of thedummy gates 250, as shown in FIG. 9. Each replacement metal gatestructure includes an inner gate dielectric layer 260, and an outerbi-metallic layer. In one embodiment, the inner gate dielectric layer260 is a 2-5 nm thick layer of a high-k material such as halfnium oxide(HfO₂), and the outer metallic layer includes a work function metal 262,e.g., a 3-6 nm thick layer of titanium nitride (TiN) or titanium carbide(TiC), and a gate electrode 264, e.g., tungsten (W). The gate electrode264 is then recessed below the pad oxide 236 using a CMP process, andthe recessed area is filled with an insulating gate cap 266 such as acarbon compound, e.g., SiBCN or amorphous carbon, or alternatively,AlO₂. The insulating gate cap 266 is then planarized, to stop on the finhard mask 238. The multi-layer metal gate structures thus formed abutopposite sides of the fins 232, 234 to control current flow in theconduction channel of the TFET.

At 212, the fin hard mask 238 is replaced with heavily-doped silicon toform heavily doped source regions on top of the fins 232, 234, in linewith the doped drain regions 230, 228, as shown in FIG. 10. The sourceregion formation begins by covering both the NFET and PFET with a SiBCNhard mask.

First, the SiBCN hard mask is opened to expose the NFET. Opening theSiBCN hard mask is accomplished by conventional patterning techniques,e.g., lithography and reactive ion etching or wet etching. The fin hardmask 238 is then removed from the n-type fin 232, for example, by usinga wet etchant such as hydrofluoric acid (HF), or a combination of HF andethylene glycol (EG), both of which provide good selectivity to siliconand SiBCN. A P⁺⁺ source region 270 made of highly boron-doped silicon(Si) or silicon germanium (SiGe) is then epitaxially grown from the topsurface of the n-type fin.

Next, the SiBCN hard mask is opened to expose the PFET. The fin hardmask 238 is removed from the p-type fin 234 as described above. Then, anN⁺⁺ source region 272 made of highly arsenic- or phosphorous-dopedsilicon (Si) or silicon carbide (SiC) is epitaxially grown from the topsurface of the p-type fin. Finally, the remaining SiBCN hard mask isremoved.

The concentration of dopants in the P⁺⁺ source region 270 and the N⁺⁺source region 272 is in the range of about 2.0-3.0 E 20 cm⁻³. Formationof the N⁺⁺ source region 272 and the P⁺⁺ source region 270 complete thep-type tunneling FInFET 274 and the n-type tunneling FinFET 276,respectively.

At 214, a second ILD layer 278 is deposited over the completed tunnelingFInFETs 274, 276, followed by formation of contacts to the gate, source,and drain terminals, in the usual way. Contacts 280, 281, 282, 284, 286can be formed using conventional patterning methods well known in theart. Some or all of the contacts can be designed to have differentshapes, for example, circular contacts as shown in FIG. 11 or squarecontacts as shown in FIG. 13, or any other suitable polygonal shape.

FIGS. 11 and 13 show a top plan view of the completed tunneling FinFETdevices after formation of P⁺⁺ source contacts 280, N⁺⁺ source contacts281, gate contacts 282, N⁺ drain contacts 284, and P⁺ drain contacts286. FIG. 12 shows a cross-sectional view of the completed tunnelingFInFETs 274, 276 along a cut line that passes through the gate contacts282.

FIG. 14 shows a cross-sectional view of the completed tunneling FInFETs274, 276 along a cut line that passes through the source contacts 280,281 and the drain contacts 284, 286. Thus, a pair of NFET and PFETvertical transistor devices are formed together using existing CMOSprocess technology, wherein all of the terminals are electricallyaccessible from the front side, without reliance on a backside contact.

It will be appreciated that, although specific embodiments of thepresent disclosure are described herein for purposes of illustration,various modifications may be made without departing from the spirit andscope of the present disclosure. Accordingly, the present disclosure isnot limited except as by the appended claims.

These and other changes can be made to the embodiments in light of theabove-detailed description. In general, in the following claims, theterms used should not be construed to limit the claims to the specificembodiments disclosed in the specification and the claims, but should beconstrued to include all possible embodiments along with the full scopeof equivalents to which such claims are entitled. Accordingly, theclaims are not limited by the disclosure.

The various embodiments described above can be combined to providefurther embodiments. All of the U.S. patents, U.S. patent applicationpublications, U.S. patent applications, foreign patents, foreign patentapplications and non-patent publications referred to in thisspecification and/or listed in the Application Data Sheet areincorporated herein by reference, in their entirety. Aspects of theembodiments can be modified, if necessary to employ concepts of thevarious patents, applications and publications to provide yet furtherembodiments.

1. A method, comprising: forming a first source/drain layer in asubstrate; forming a channel layer over the first source/drain layer;forming a second source/drain layer over the channel layer; forming anisolation layer on the first source/drain layer and laterally abuttingthe channel layer; and forming a gate structure laterally abutting asidewall surface of the channel layer from a first lateral direction,the channel layer extending laterally beyond an edge or a perimeter ofthe gate structure in a second lateral direction that is transverse tothe first lateral direction.
 2. The method of claim 1 wherein theforming the gate structure includes forming the gate structure over theisolation layer and below the second source/drain layer.
 3. The methodof claim 1, wherein the forming the gate structure includes: forming agate dielectric layer abutting the channel region on a sidewall of thechannel layer; forming a conductive work function adjustment layerabutting the gate dielectric layer; and forming a gate electrodeabutting the conductive work function adjustment layer, the conductivework function adjustment layer positioned between the gate dielectriclayer and the gate electrode.
 4. The method of claim 1, wherein theforming the first source/drain layer includes doping the firstsource/drain layer; and the forming the second source/drain layerincludes doping the second source/drain layer.
 5. The method of claim 4,wherein the first source/drain layer is doped with a differentconductivity type from the second source/drain layer.
 6. The method ofclaim 5, wherein the forming the channel layer includes doping thechannel layer with a same conductivity type as the first source/drainlayer.
 7. The method of claim 6, wherein the channel layer is doped witha smaller dopant concentration than the first source/drain layer.
 8. Themethod of claim 1, comprising forming an vertical isolation wall overthe isolation layer and laterally adjacent to the gate structure, thegate structure positioned laterally between the isolation wall and thechannel layer.
 9. A method, comprising: forming a stack structure over adoped region of a substrate, the stack structure including asemiconductor fin structure and a sacrificial layer over thesemiconductor fin structure; forming a first isolation layer surroundinga lower portion of the semiconductor fin structure; forming a secondisolation layer over the first isolation layer and laterally to thestack structure, the second isolation layer spaced apart from a sidewallof the semiconductor fin structure; forming a gate structure over thefirst isolation layer and between the semiconductor fin structure andthe second isolation layer, the semiconductor fin structure extendinglaterally beyond an edge or a perimeter of the gate structure; removingthe sacrificial layer; and forming an epitaxy semiconductor layer overthe semiconductor fin structure.
 10. The method of claim 9, furthercomprising forming a trench isolation in the substrate laterally to thedoped region.
 11. The method of claim 10, wherein the trench isolationis formed integrally with the first isolation layer
 12. The method ofclaim 9, wherein the gate structure vertically extending from the firstisolation layer to a level below an interface between the semiconductorfin structure and the sacrificial layer.
 13. A method, comprising:forming a fin over a doped region in a substrate, the fin extendingsubstantially perpendicular to a surface of the doped region, the finincluding: a first semiconductor region abutting the surface of thedoped region; and a second semiconductor region overlying and abuttingthe first semiconductor region; forming an isolation layer on thesurface of the doped region and abutting lower portions of sides of thefirst semiconductor region; forming a gate structure abutting oppositesides of the first semiconductor region; forming a first gate contact onthe gate structure, the first gate contact being adjacent to a firstside of the fin; and forming a second gate contact on the gatestructure, the second gate contact being adjacent to a second side ofthe fin that is opposite to the first side.
 14. The method of claim 13,wherein the gate structure includes two gate dielectric layers abuttingopposite sides of the first semiconductor region, respectively, two workfunction adjustment layers abutting the two gate dielectric layers,respectively, and two gate electrodes abutting the two work functionadjustment layers, respectively.
 15. The method of claim 13, wherein thesecond semiconductor region is doped with a different conductivity typefrom the doped region in the substrate.
 16. The method of claim 15,wherein the first semiconductor region is doped with a same conductivitytype as and a lower dopant concentration than one of the secondsemiconductor region or the doped region in the substrate.
 17. Themethod of claim 15, wherein a dopant concentration of the secondsemiconductor region is at least 2-3 times greater than a dopantconcentration of the doped region in the substrate.
 18. The method ofclaim 16, wherein a dopant concentration of the doped region in thesubstrate is at least 10 times greater than a dopant concentration ofthe first semiconductor region.
 19. The method of claim 13, wherein thefin has a fin width within a range of about 6-12 nm.
 20. The method ofclaim 13, comprising forming an isolation wall of silicon nitride, thegate structure being positioned between the first semiconductor regionand the isolation wall.